• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to an aqueous cutting solution with 80 to 99.5 wt .-% water and 0.1 to 20 wt .-% of at least one glycol compound and optionally one or more compounds selected from the group consisting of pH-regulating compounds, solubilizers, Anticorrosion agents, antifoaming agents, surfactants, sequestering agents and preservatives, for cooling and lubricating a cutting wire with fixed cutting means of a single-wire or multi-wire saw. Furthermore, the invention is directed to cutting processes carried out therewith, in particular for cutting monocrystalline or multicrystalline silicon workpieces and corresponding uses.
    公开号:CH707104B1
    申请号:CH00189/14
    申请日:2012-08-06
    公开日:2016-06-15
    发明作者:Puschmann Arndt；Aghabozorgtar Alireza
    申请人:Borer Chemie Ag；
    IPC主号:
    专利说明:

    The present invention relates to an aqueous cutting solution with 80 to 99.5 wt .-% water and 0.1 to 20 wt .-% of at least one glycol compound and optionally one or more compounds selected from the group consisting of pH-regulating compounds , Solubilizers, anticorrosion agents, foam reducing agents, surfactants, sequestering agents and preservatives, for cooling and lubricating a fixed wire cutting wire of a single wire or multiple wire saw. Furthermore, the invention is directed to cutting processes carried out therewith, in particular for cutting monocrystalline or multicrystalline silicon workpieces and corresponding uses.
    Background of the invention
    The prior art is described for historical reasons with reference to the wire cutting of crystalline silicon products and because this application is the preferred embodiment of the present invention. However, it is emphasized that the invention is by no means limited to the cutting of silicon wafers and that it can be transferred to other solid products and is preferably directed to wire cutting.
    Over 80% of global solar cell manufacturing requires the cutting of multi or monocrystalline silicon ingots into wafers. For this purpose, the wirewound wire saw is the predominantly used wafer cutting apparatus in the photovoltaic and microelectronics industries. This technique dominates over other techniques in the photovoltaic and microelectronics industry because of the high throughput, low loss of cutting chips, small size and ingot size limitations, and excellent wafer quality
    Prior to wafer slicing, that is, wafers, the multicrystalline ingots or monocrystalline Czochralski crystals (ingots) undergo preformation, i. the trimming of the ends and the square cut of the sides.
    After formatting, a wire saw cuts the workpiece into wafers having a thickness in the range of usually about 70 to 200 microns. In this technique, typically a wire having a diameter of about 80 to 180 μm and a roll length of about 100 to 2500 km from a supply roll is passed through a wire tensioning system via wire guide rolls at a constant or compensated groove pitch. By wrapping these spaced apart parallel wire guide rollers a wire field is formed. At the other end, a take-up reel picks up the spent wire. There are two cutting techniques. Either a cutting wire with a fixed cutting means such as a diamond wire is used or alternatively a Zerspanungssuspension ("slurry"), which is applied with a nozzle system on the wire field and is carried along with the moving wire in the saw channel, there to a cutting-lapping process perform. The slurry consists of hard abrasive grains, generally silicon carbide, with a diameter in the range of 5 to 15 microns, which are usually suspended in glycol, oil or mixtures of water with additives. By pressing the silicon workpiece against the wire field, it is cut into thousands of wafers in a single pass. For an overview of wire-field technology, see H.B. Möller, Basic Mechanisms and Models of Multi-wire Sawing, Advanced Engineering Materials, 6, No. 7 (2004) and Funke et al., Surface Damage of Multiwire Sawing and Mechanical Properties of Silicon wafers, 2CV.5.7, 20th Photovoltaic Solar Energy Conference, Barcelona, Spain (2005).
    At the end of Drahtfeldsägeverfahrens thousands of thin wafers are usually still attached to a partially cut support plate made of glass (sacrificial carrier, now with a comb-like structure), from which they are solved by appropriate measures (solvent, hot water steam, heat, acid, etc.) become. If a slurry has been used, then all wafers in contact with the wire are now contaminated with sticky slurry, which must be completely removed before further processing for photovoltaic and microelectronics purposes. For slurry, glycol is typically added in amounts sufficient to increase the viscosity thereby promoting the lapping (chipping) effect. Increased viscosity is required to transfer the directional movement from the wire to the cutting means. The disadvantage of the slurry is that it is sticky, that the reprocessing of slurry is labor intensive and disposal is expensive because of the high content of organic matter.
    In a diamond wire with fixed cutting agent usually aqueous cutting solutions are used with low viscosity, which are quite easy to wash off freshly cut wafers. In addition, the cutting means is fixed on the wire, i. fixed, and so the reprocessing of the cutting solution is much easier, because all cutting chips can be easily removed by filtration or centrifugation. Because of the low level of organic contaminants in the highly diluted liquids, disposal is less problematic and more economical with slurries.
    For cutting with wire fixed with cutting means, the cutting solution has a cooling and lubricating action and often contains a number of functional components such as pH-regulating compounds, corrosion inhibitors, foam reducing agents, surfactants, sequestering agents and preservatives.
    Surfactants in cutting solutions have been shown to be effective in reducing surface tension and depositing deposits on the wire tool, cutter and cut workpiece. They also disperse all heavy metals and some of them are bacteriocidal and act as a preservative during storage and use. Cationic and nonionic surfactants are particularly useful. In addition, because of the reduction in surface tension, they have a direct effect on the sticking together of the wires. Temporary adhesion of the wires will affect the surface of the cut workpiece and this has a direct impact on the quality and later usability of the wafer in silicon wafer technology.
    An example of a cutting solution for use in cutting with a wire with fixed cutting means (diamond) is Deconex MBC 100 (Borer Chemie AG, Zuchwil, Switzerland). This solution has a pH of 9.1, a density of about 1 g / ml, consists of about 80% by weight of deionized water, about 15% by weight of triethanolamine, and cationic and nonionic surfactants. The concentrate is diluted with tap water to 3 to 5% depending on the cutting requirement and cutting device used. However, wire adhesion still remains the major cause of surface irregularities in wafers cut with diamond wire using this product and similar products. That's why Deconex MBC 100 has been proven to cut sapphire, metals and specialty materials, but not silicon.
    Although offset after use with cutting chips cutting solutions for wires with fixed cutting means due to the low concentrations of ingredients and lower viscosity and associated low adhesion are easier to remove from the cut materials and cutting device components as a slurry, it still requires in addition Rinsing usually a mechanical action such as a sponge or high pressure to clean the dirty parts.
    It is therefore the object of the present invention, improved aqueous cutting agent compositions for cooling and / or lubricating a wire with a fixed cutting center! a single-wire or multi-wire saw, in particular a cutting means composition which reduces the adherence of the wires, avoids the deposition of deposits on the wire tool, the cutting device and the cut workpiece and results in a regular cut surface.
    This object is achieved by means of an aqueous cutting solution comprising:<tb> (i) <SEP> 80 to 99.5% by weight of water,<tb> (ii) <SEP> 0.1 to 20% by weight of at least one glycol compound, and<tb> (iii) <SEP> optionally one or more compounds selected from the group consisting of pH-regulating compounds, solubilizers, corrosion inhibitors, antifoaming agents, surfactants, sequestering agents and preservatives, and their use for cooling and lubricating a fixed-cutting-edge cutting wire a single wire or multiple wire saw.
    It has surprisingly been found that when glycol compounds are added to aqueous cutting solutions for cutting wires with fixed cutting means that this has a positive effect on the adherence of the wires to each other and on the deposition of deposits. It is believed that this phenomenon explains the good results obtained regularly with slurry-based wire-saws, but in which the glycols are added solely for the purpose of increasing the viscosity to transfer the directional energy of the wire to the lapping cutting means. It has therefore gone unnoticed that glycols can also have a significant impact on wafer sawing with fixed cutting tools, even when the concentration of glycol compound (s) is significantly lower than in conventional slurry compositions.
    Preferably, the weight fraction of water in the cutting solution is quite high, preferably 90 to 99 or 92 to 99, more preferably 94 to 99, most preferably 94 to 98 wt .-%.
    In a preferred embodiment, the proportion by weight of the at least one glycol compound in the cutting solution is 1.3 to 10, preferably 1.3 to 8, more preferably 1.5 to 6, most preferably 1.5 to 5 wt .-% ,
    Those skilled in the art will recognize that the aqueous cutting solution for use in the present invention optionally one or more compounds selected from the group consisting of pH-regulating compounds, solubilizers, corrosion inhibitors, foam reducing agents, surfactants, sequestering agents and preservatives, and further if necessary may contain functional components. Anti-corrosion agents protect the wire as well as the cutting devices. Because of the rapid movement of the wires in the cutting solution and the introduction of air into the cutting solution, there is a strong tendency for blistering and consequent foaming, a phenomenon that is undesirable for a number of reasons. For example, the foam dries relatively quickly and the solids contained therein can fall on the wire and the workpiece and lead to wire deflection and contamination. Also, the foam may cause the ingredients of the solid cutting means to components of the cutting device that are inaccessible to the liquid cutting solution.
    It is preferred that the pH of the cutting solution is between 2 and 10, preferably 3 and 9, more preferably 4 and 8 or 4 and 7 and most preferably between 4 and 6.
    In this connection, it is preferred that the pH-regulating compound in the solution of the invention is an alkaline compound, preferably selected from alkali / alkaline earth metal hydroxides and amines, more preferably from NaOH, KOH and alkanolamine, most preferably monoethanolamine, diethanolamine and triethanolamine.
    In an even more preferred embodiment, the pH-regulating compound in the solution according to the invention is an alkanolamine, preferably triethanolamine, and is preferably in a concentration of 0.01 to 0.5, preferably 0.01 to 0.2, more preferably 0.01 to 0.1, most preferably 0.02 to 0.06 before.
    The surfactants for use in the cutting solution may be any surfactants that reduce surface tension, have a bacteriocidal effect, and / or reduce the build-up of chips deposits. Preferably, the surfactants are selected from cationic and nonionic surfactants, preferably nonionic surfactants, preferably from bacteriocidal and / or low foaming surfactants. Non-limiting embodiments of preferred surfactants for use in the inventive cutting solution are fatty alcohol ethoxylates and propoxylates, alkyl polyglucosides, etc., especially Imbentin-SG / 43 / C and Imbentin PPF (Kolb Distribution Ltd., Switzerland).
    In a preferred embodiment of the inventive cutting solution, the at least one glycol compound is an alkyl glycol, preferably an alkyl diglycol, wherein the alkyl group preferably has 1 to 10, more preferably 1 to 6, most preferably 1 to 4 carbon atoms. Particularly preferred alkyl glycol compounds are diethyl glycol, butyl diglycol, n-hexyl glycol, propylene glycol, diethylene glycol, triethylene glycol, methoxypropanol, butoxypropanol, monobutyl ether and monobutylethyl acetates. Very particular preference is given to butyldiglycol and propylene glycol.
    It is also preferred that the cutting solution comprise more than one type of glycol compound, preferably a combination of butyldiglycol and propylene glycol. In particular, it is preferred that the butyl diglycol to propylene glycol be present in a ratio of 1 to 4 to 4 to 1, preferably 1 to 3 to 3 to 1, more preferably 1 to 2 to 2 to 1, most preferably about 1 to 1.
    In a very particular embodiment, the inventive aqueous cutting solution comprises:<tb> (i) <90 to 99, preferably 92 to 99, more preferably 94 to 99, most preferably 94 to 98 wt% of water, and<tb> (ii) <SEP> 1.3 to 10, preferably 1.3 to 8, more preferably 1.5 to 6, most preferably 1.5 to 5% by weight of glycol compound, preferably butyl diglycol, more preferably butyl diglycol and propylene glycol, preferably in a ratio of 1 to 4 to 4 to 1 or 1 to 3 to 3 to 1, more preferably 1 to 2 to 2 to 1, most preferably about 1 to 1, as well as(iii) <SEP> optionally at least one pH-regulating compound, preferably an alkaline compound, preferably selected from alkali metal / alkaline earth metal hydroxides and amines, more preferably from NaOH, KOH and alkanolamine, more preferably monoethanolamine, diethanolamine and triethanolamine, and most preferably triethanolamine,<tb> (iv) <SEP> optionally at least one corrosion inhibitor, preferably an alkyltriazole, more preferably tolyltriazole,<tb> (v) <SEP> optionally at least one preservative, preferably an alkyl alcohol ammonium salt, more preferably N, N-dimethyl-2-hydroxypropyl ammonium chloride, preferably as a polymer,<tb> (vi) <SEP> optionally at least one surfactant, preferably a cationic or nonionic surfactant, more preferably a nonionic surfactant, preferably an EO / PO adduct, most preferably lmbentin-SG / 43 / C (Kolb Distribution Ltd, Switzerland),<tb> (vii) <SEP> optionally at least one sequestering agent, preferably a phosphonic acid, more preferably a diphosphonic acid, most preferably an acetodiphosphonic acid, wherein the pH of the solution is preferably between 2 and 10, preferably 3 and 9, more preferably 4 and 8 or 4 and 7, most preferably 4 and 6.
    For ease of handling, storage and transport purposes, the cutting solution according to the invention may be present as a concentrate. Therefore, the present invention also relates to a cutting solution concentrate for producing an aqueous cutting solution according to the invention, wherein the concentrate is 2 to 50 times, preferably 5 to 40 times, more preferably 5 to 30 times, most preferably 10 to 20 times more concentrated than the final aqueous cutting solution.
    Although the inventive aqueous cutting solution is particularly well suited for cutting silicon workpieces with diamond wires, the invention is by no means limited to diamonds as cutting means fixed to the wire. In a preferred embodiment, the cutting means is selected from the group consisting of diamond, silicon carbide, sapphire and boron nitride, preferably silicon carbide and diamond, more preferably diamond.
    In addition, the cutting solution according to the invention can be used to improve wire cutting, in particular wire-cutting with many types of solid workpieces. In a preferred embodiment, the solid workpieces are selected from the group consisting of solid metals, semimetals, metal alloys, crystals, gemstones, polymers, and glass, preferably multicrystalline silicon, monocrystalline silicon, ceramics, glass, sapphire, silicon carbide, silicon nitride, and laser optics.
    In a further aspect, the present invention is directed to the use of the cutting solution described above for cooling and lubricating a fixed wire cutting wire of a single wire or multiple wire saw, wherein the cutting means is preferably selected from the group consisting of diamond, silicon carbide, sapphire Boron nitride, preferably silicon carbide and diamond, more preferably diamond, and wherein the solid workpiece to be cut is preferably selected from the group consisting of solid metals, semi-metals, metal alloys, crystals, gemstones, polymers and glass, preferably multicrystalline silicon, monocrystalline silicon, ceramics, Glass, sapphire, silicon carbide, silicon nitride and laser optical materials.
    In an additional aspect, the invention describes a method for cutting workpieces from solid materials, preferably solid materials, by means of a fixed wire cutting wire of a single wire or multiple wire saw, comprising the step of contacting the wire (s) with an aqueous cutting solution according to the invention wherein the cutting means is preferably selected from the group consisting of diamond, silicon carbide, sapphire, boron nitride, preferably silicon carbide and diamond, more preferably diamond, and wherein the solid workpiece to be cut is preferably selected from the group consisting of solid metals, semi-metals, metal alloys, Crystals, gemstones, polymers and glass, preferably multicrystalline silicon, monocrystalline silicon, ceramics, glass, sapphire, silicon carbide, silicon nitride and laser optics materials.
    In the most preferred embodiment, the invention relates to a method of cutting workpieces of solid materials, preferably silicon, by means of a fixed-wire cutting wire of a single-wire or multiple-wire saw, preferably a wire-cutting wire saw for cutting and wafering silicon.
    In the following, specific embodiments of the aqueous cutting solution for use in the inventive method are discussed solely for illustrative purposes and are not intended to limit the scope of the invention as set forth in the claims in any way.
    example 1
    Cutting silicon wafers from polycrystalline ingots with a diamond wire saw
    Polycrystalline ingots were cut to approximately the same size (156 x 156 mm format) by means of a band saw (e.g., BS806, Meyer-Burger AG, Switzerland) or by a diamond wire saw (DiamondWire Squier, Meyer-Burger AG, Switzerland). The bricks were cranked at both ends (e.g., inner hole saw TS207, Meyer-Burger AG). Before further processing, the sides were polished.
    Each of the bricks was wire-cut (DS 265, MB Wafertec, Thun, Switzerland) with diamond wire from Diamond Wire Material Technologies, USA, with a diameter of 145 microns (diamond grain diameter of 20 to 25 microns, wire diameter of about 120 microns) cut into wafers having a thickness of about 200 μm.
    As a cutting solution or coolant and lubricant, the concentrates listed in the table were used diluted with tap water to 10%.
    Table 1<tb> Water VE <a> <SEP> Solvent <SEP> 79.7 <SEP> 68.7 <SEP> 73 <SEP> 47.9<Tb> TEA <b> <September> Base <September> 15 <September> 15 <September> <September> 0.5<Tb> diglycol <September> solubilizer <September> <September> 10 <September> <September> 20<Tb> propylene glycol <September> solubilizer <September> <September> <September> 1 <September> 20<tb> Preventol <c> <SEP> Solvent, Corrosion Protection <SEP> 3 <SEP> 3 <SEP> 1 <SEP> 3<tb> Barquat PQ <d> <SEP> Preservative <SEP> 2 <SEP> 2 <SEP> <SEP> 2<Tb> lmbentin-SG / 43 / C <e> <September> surfactant <September> <September> 1 <September> 5 <September> 6<tb> Imbentin PPF <f> <SEP> Surfactant <SEP> <SEP> <SEP> 1 <SEP><Tb> Briquest <g> <September> sequestering <September> 0.3 <September> 0.3 <September> <September> 0.6<Tb> ethanolamine <September> Base <September> <September> <September> 3 <September><tb> Accusol 445 50% <h> <SEP> Complexer <SEP> <SEP> <SEP> 8 <SEP><tb> Kna-Cumene Sulfonate <i> <SEP> Emulsifier, Solubilizer <SEP> <SEP> <SEP> 8 <SEP><Tb> Total <September> <September> 100 <September> 100 <September> 100 <September> 100<tb> pH <SEP> <SEP> 9 <SEP> 5-7 <SEP> 4-5 <SEP> 4-5 <a> Water VE <0.1 μS (10 Mohm); <b> Triethanolamine 99%; <c> Preventol CI-7-100 / 20% in propylene glycol (80%) and CobratecTT-100 C granules (20) (Cobratec Metal Protection, Germany); <d> Barquat PQ, 60%, Lonza Inc. <b> lmbentin-SG / 43 / C (Kolb Distribution Ltd., Switzerland); <f> Imbentin PPF (Kolb Distribution Ltd., Switzerland); <br> Briquest (Surfachem Group Ltd, England); <h> Accusol 445 50% (Dow, Germany); <i> Kna-cumene sulfonate (Sasol, Germany); * In% by weight
    Deconex MBC100 is a cutting and cooling solution marketed by Borer AG, Solothurn, Switzerland for sapphire, metal and special material processing equipment. DWS Fluid TP717, Diamond Wire Material Technologies from Meyer-Burger AG, Steffisburg, Switzerland, was tested as a further cutting solution with a pH value of 7.2.
    The cut was made in shuttle mode, i. about 1000 m forward and 900 m back, so that at each change of direction always about 100 m of new wire were introduced. Alternatively, one can also cut continuously at the same speed of 14 m / s. The cutting speed at Brick was about 1 mm / min. The cutting solution was continuously and repeatedly filtered to remove cut chips. One cut took about three to four hours.
    The cut wafers were removed from the carrier arm, dipped in clean cutting solution of the same type and then brought to the pre-cleaning. Here, the wafers were separated from the carrier arm by treatment with acetic acid at 40 ° C and then transported to a conventional wafer-cleaning machine (Gebr. Schmid GmbH + Co., Freudenstadt, Germany). Thereafter, the clean and dry wafers were examined for quality and geometric properties by means of an inspection device (HE-WIS-04 Henneke Metrology Systems GmbH, Zülpich, Germany). In addition, the wire saws used were cleaned. The cutting solutions prepared as concentrate solutions and diluted to 10% with standard tap water gave the following results.
    Except the cutting solution PV330 with a relatively high glycol content, all cutting solutions proved to be less than optimal or even disadvantageous. The cutting process was insufficient, the wafer surface correspondingly uneven. With the cutting solution PV330-v1, the cut was stopped even after about 13 cm cutting depth due to considerably uneven cuts. Only the cutting solution PV330 according to the invention produced uniform cuts without cutting through wire deflection. In addition, this cutting solution was easy to clean by filtration. Another striking feature of this cutting solution was that the wire saw cooled with it was considerably easier to clean and the cutting solution, which had been mixed with cut chips, could easily be washed off the soiled surfaces with water without much mechanical support.
    权利要求:
    Claims (17)
    [1]
    1. Aqueous cutting solution comprising:<tb> (i) <80 to 99.5, especially 90 to 99% by weight of water, preferably 92 to 99, more preferably 94 to 99, most preferably 94 to 98% by weight of water,<tb> (ii) <SEP> 0.1 to 20, especially 1.3 to 10% by weight of at least one glycol compound, preferably 1.3 to 8, more preferably 1.5 to 6, most preferably 1.5 to 5% by weight of glycol compound,<tb> (iii) <SEP> optionally one or more compounds selected from the group consisting ofpH-regulating compounds, preferably alkaline compounds, preferably selected from alkali / alkaline earth hydroxides and amines, more preferably from NaOH, KOH and alkanolamine, more preferably monoethanolamine, diethanolamine and triethanolamine, and am most preferably triethanolamine,<Tb> <September> (b) <September> solubilizers,<tb> <SEP> (c) <SEP> corrosion inhibitors, preferably an alkyltriazole, more preferably tolyltriazole,<tb> <SEP> (d) <SEP> Foam-reducing agents,<tb> <SEP> e) <SEP> surfactants, preferably a nonionic surfactant, more preferably an EO / PO adduct,<tb> <SEP> (f) <SEP> sequestering agents, preferably a phosphonic acid, more preferably a diphosphonic acid, most preferably an acetodiphosphonic acid andPreservatives, preferably an alkyl alcohol ammonium salt, more preferably N, N-dimethyl-2-hydroxypropyl ammonium chloride, preferably as a polymer, wherein the pH of the solution is preferably between 2 and 10, preferably 3 and 9, more preferably 4 and 8 or 4 and 7, most preferably 4 and 6.
    [2]
    2. Use of an aqueous cutting solution comprising:<tb> (i) <SEP> 80 to 99.5% by weight, preferably 92 to 99, more preferably 94 to 99, most preferably 94 to 98% by weight of water,<tb> (ii) <SEP> 0.1 to 20% by weight, preferably 1.3 to 8, more preferably 1.5 to 6, most preferably 1.5 to 5% by weight of at least one glycol compound,<tb> (iii) <SEP> optionally one or more compounds selected from the group consisting of pH-regulating compounds, solubilizers, corrosion inhibitors, antifoaming agents, surfactants, sequestering agents and preservatives, for cooling and lubricating a cutting wire with fixed cutting means of a single wire or multiple wire saw.
    [3]
    3. Use according to claim 2, wherein the pH-regulating compound is an alkaline compound, preferably selected from alkali / alkaline earth metal hydroxides and amines, more preferably from NaOH, KOH and alkanolamine, most preferably monoethanolamine, diethanolamine and triethanolamine.
    [4]
    4. Use according to one of claims 2 or 3, wherein the pH-regulating compound is an alkanolamine, preferably triethanolamine, preferably in a concentration of 0.01 to 0.5, preferably 0.01 to 0.2, more preferably 0, 01 to 0.1, most preferably 0.02 to 0.06 wt .-%.
    [5]
    5. Use according to any one of claims 2 to 4, wherein the at least one glycol is an alkyl glycol, preferably an alkyl diglycol, wherein the alkyl group preferably has 1 to 10, more preferably 1 to 6, most preferably 1 to 4 carbon atoms.
    [6]
    Use according to any one of claims 2 to 5, wherein the at least one glycol is a butyl glycol, preferably a butyl diglycol, more preferably in combination with a propylene glycol.
    [7]
    Use according to any one of claims 2 to 6, wherein the at least one glycol is butyldiglycol and propylene glycol in a ratio of 1 to 4 to 4 to 1, preferably 1 to 3 to 3 to 1, more preferably 1 to 2 to 2 to 1, most preferably about 1 to 1.
    [8]
    Use according to any one of claims 2 to 7, wherein the cutting means is selected from the group consisting of diamond, silicon carbide, sapphire, boron nitride, preferably silicon carbide and diamond, more preferably diamond.
    [9]
    9. Use according to any one of claims 2 to 8 for cutting solid workpieces selected from the group consisting of solid metals, semi-metals, metal alloys, crystals, gemstones, polymers and glass, preferably multicrystalline silicon, monocrystalline silicon, ceramics, sapphire, silicon carbide, silicon nitride and laser optics solid materials.
    [10]
    10. A method of cutting workpieces comprising the steps<tb> (a) <SEP> providing workpieces of solid materials and a fixed-diameter cutting wire of a single-wire or multi-wire saw,<tb> (b) <SEP> Contacting the wire (s) with an aqueous cutting solution comprising:<tb> <SEP> (i) <SEP> 80 to 99.5% by weight, preferably 92 to 99, more preferably 94 to 99, most preferably 94 to 98% by weight of water,<tb> <SEP> (ii) <SEP> 0.1 to 20 wt%, preferably 1.3 to 8, more preferably 1.5 to 6, most preferably 1.5 to 5 wt% at least a glycol compound,<tb> <SEP> (iii) <SEP> optionally one or more compounds selected from the group consisting of pH-regulating compounds, solubilizers, corrosion inhibitors, foam-reducing agents, surfactants, sequestering agents and preservatives,<tb> (c) <SEP> Cutting the workpiece, and<tb> (d) <SEP> Obtain the cut workpiece.
    [11]
    A process according to claim 10, wherein the pH-adjusting compound is an alkaline compound, preferably selected from alkali / alkaline earth hydroxides and amines, more preferably from NaOH, KOH and alkanolamine, most preferably monoethanolamine, diethanolamine and triethanolamine.
    [12]
    12. The method according to any one of claims 10 or 11, wherein the pH-regulating compound is an alkanolamine, preferably triethanolamine, preferably in a concentration of 0.01 to 0.5, preferably 0.01 to 0.2, more preferably 0 , 01 to 0.1, most preferably 0.02 to 0.06 wt .-%.
    [13]
    13. The method according to any one of claims 10 to 12, wherein the at least one glycol is an alkyl glycol, preferably an alkyl diglycol, wherein the alkyl group preferably has 1 to 10, more preferably 1 to 6, most preferably 1 to 4 carbon atoms.
    [14]
    14. The method according to any one of claims 10 to 13, wherein the at least one glycol is a butyl glycol, preferably a butyl diglycol, more preferably in combination with a propylene glycol.
    [15]
    15. The method according to any one of claims 10 to 14, wherein the at least one glycol butyldiglycol and propylene glycol in a ratio of 1 to 4 to 4 to 1, preferably 1 to 3 to 3 to 1, more preferably 1 to 2 to 2 to 1, most preferably about 1 to 1.
    [16]
    16. The method according to any one of claims 10 to 15, wherein the cutting means is selected from the group consisting of diamond, silicon carbide, sapphire, boron nitride, preferably silicon carbide and diamond, more preferably diamond.
    [17]
    17. The method according to any one of claims 10 to 16 for cutting solid workpieces selected from the group consisting of solid metals, semi-metals, metal alloys, crystals, gemstones, polymers and glass, preferably multicrystalline silicon, monocrystalline silicon, ceramics, sapphire, silicon carbide, silicon nitride and laser optics solid materials.
    类似技术:
    公开号 | 公开日 | 专利标题
    DE19983092B4|2008-09-04|Cutting oil, cutting oil composition and their use
    JP2015536379A|2015-12-21|Water-soluble cutting fluid composition
    TWI460267B|2014-11-11|Water - based cutting fluid and water - based cutting agent
    CN1858169A|2006-11-08|Semiconductor silicon material water base cutting liquid
    DE112005003549T5|2008-02-21|Process for producing silicon blocks and silicon wafers
    KR19980018614A|1998-06-05|File-type aqueous solution composition
    DE102004057623A1|2006-06-01|Aqueous cleaning agent concentrate, useful for cleaning oil- and/or fat- polluted metallic surfaces, comprises water, glycol ether and/or non-ionic surfactant, polyethylenimine and cationic surfactant
    EP2465625B1|2013-05-29|Method and device for producing thin silicon rods
    EP0709448A2|1996-05-01|Cutting fluid, method for production thereof, and method for cutting ingots
    WO2009053004A1|2009-04-30|Wire saws comprising thixotropic lapping suspensions
    CH707104B1|2016-06-15|Cutting solution for cooling and lubricating a cutting wire with a fixed cutting means.
    DE102014013591A1|2016-03-17|Process for the preparation of silicon surfaces with low reflectivity
    EP2601280B1|2014-10-08|Carrier fluids for abrasives
    WO2011050945A1|2011-05-05|Wire saw comprising a wire web and cleaning nozzles
    CN108863104B|2021-11-23|Glass stripping agent and glass stripping process
    US5947102A|1999-09-07|Method for cutting wafers from a crystal
    JP2011187714A|2011-09-22|Detergent composition for cutting objects
    DE102006000882A1|2007-07-05|Purification of a sawed silicon wafer, useful in microelectronic components and photovoltaics, comprises contacting the silicon wafer with an aqueous, alkaline cleaning solution and a non-ionic surfactant
    EP2809754A1|2014-12-10|Cooling and/or lubricating fluids for wafer production
    WO2011009587A1|2011-01-27|Mechanically working and cutting silicon in an alkaline milieu
    JP4874772B2|2012-02-15|Cleaning composition for sliced silicon wafer or ingot
    DE102010015111A1|2011-09-29|Fluide separation media and their use
    CN1858087A|2006-11-08|Water base grinding liqurd for semiconductor silicon wafter
    KR20120056196A|2012-06-01|Environment-friendly water-soluble cutting fluid for wafer, and composition containing the same cutting fluid
    DE102010014551A1|2011-09-29|Fluid useful e.g. for sawing brittle material block and for producing wafers, photovoltaic cells and electronic components, comprises at least one glycol base, aqueous acid and optionally at least one additive
    同族专利:
    公开号 | 公开日
    WO2013023945A1|2013-02-21|
    DE112012003393A5|2014-07-10|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    SU380690A1|1971-03-15|1973-05-15|LUBRICATING COOLING LIQUID FOR MECHANICAL TREATMENT OF METALS|
    AU6422190A|1989-10-04|1991-04-28|Johnson Co., Ltd.|Working fluid usable for both of cutting and electric discharge machining|
    JP2894566B2|1989-12-08|1999-05-24|ユシロ化学工業株式会社|Cutting oil|
    JPH04218594A|1990-12-19|1992-08-10|Nippon Steel Corp|Cutting method with wire thaw and processing fluid therefor|
    JP4497767B2|2001-09-06|2010-07-07|ユシロ化学工業株式会社|Water-soluble machining fluid composition for fixed abrasive wire saw|
    JP4497768B2|2001-09-06|2010-07-07|ユシロ化学工業株式会社|Water-soluble machining fluid composition for fixed abrasive wire saw|
    JP5639996B2|2009-03-31|2014-12-10|出光興産株式会社|Processing fluid for brittle materials and processing fluid for hard materials|
    JP2012172117A|2011-02-23|2012-09-10|Yushiro Chemical Industry Co Ltd|Water-soluble working fluid for fixed abrasive grain wire saw|CN106118838A|2016-06-22|2016-11-16|上海尤希路化学工业有限公司|Circulation and stress can be diluted and use photovoltaic silicon wafer wire cutting liquid|
    CN107118825A|2017-03-03|2017-09-01|华灿光电（浙江）有限公司|The cutting protection liquid and cutting method of a kind of light emitting diode|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    EP11006674|2011-08-15|
    PCT/EP2012/065310|WO2013023945A1|2011-08-15|2012-08-06|Cutting solution for cooling and lubricating a cutting wire having a fixed cutting means|
    [返回顶部]